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Si5975DC
Vishay Siliconix
Dual P-Channel 12 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 12
R DS(on) ( Ω )
0.086 at V GS = - 4.5 V
0.127 at V GS = - 2.5 V
0.164 at V GS = - 1.8 V
I D (A)
- 4.1
- 3.4
- 3.0
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFETs: 1.8 V Rated
? Compliant to RoHS Directive 2002/95/EC
1206-8 ChipFET ?
S 1
1
S 1
S 2
D 1
G 1
D 1
S 2
Marking Code
G 1
G 2
DD XX
D 2
D 2
G 2
Lot Traceability
and Date Code
Part # Code
Bottom View
Ordering Information: Si5975DC-T1-E3 (Lead (Pb)-free)
Si5975DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
- 12
±8
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
- 4.1
- 3.0
- 10
- 3.1
- 2.2
A
Continuous Source Current (Diode Conduction) a
I S
- 1.8
- 0.9
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 85 °C
P D
T J , T stg
2.1
1.1
- 55 to 150
260
1.1
0.6
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ≤ 5s
Steady State
Steady State
R thJA
R thJF
50
90
30
60
110
40
°C/W
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result
of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71320
S10-0936-Rev. C, 19-Apr-10
www.vishay.com
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